Growth of Antimony Telluride and Bismuth Selenide Topological Insulator Nanowires
نویسنده
چکیده
Topological insulators are a relatively new class of materials, which are insulating in the bulk and conductive on the surface. Surface conductance measurements of topological insulators are often obscured by impurities in the bulk. Nanowires made of a topologically insulating material provide a solution to this problem with their large surface-area-to-volume ratio. I examine the growth procedure for the topological insulator nanowires Sb2Te3 and Bi2Se3. Growth of antimony telluride nanowires was unsuccessful, but I achieved dense growths of hexagonal microplates. Bismuth selenide nanowires were grown, but it is unclear as to the ratio of bismuth and selenium present. Future experiments include the fabrication of single-nanowire devices and measurement of the conductance.
منابع مشابه
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تاریخ انتشار 2011